Method for the production of a semiconductor device
US5079188A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1989 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Jan 23, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the production of a semiconductor device in which wiring is formed in three dimensions by the use of interlevel insulators having a flat surface, which method comprises the steps of: applying first insulation material and hardening by heat treatment to form an insulating film made of the first material; etching the insulating film made of the first material in such a manner that only concave portions of an underlying layer are filled with an insulator made of the first material; and forming an insulating film made of a second material thereon, wherein the interlevel insulator is formed by repeating the steps for at least two times so as to have a plurality of the insulators made of the first material which are separated by the insulating films made of the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.