Method of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vapor
US5079192A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1990 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Aug 24, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/064
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.