Process for single crystal growth of high T.sub.c superconductors
US5079220A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1989 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | May 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/729
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Large oriented crystals greater than one millimeter in length of high T.sub.c superconducting compounds are grown by mixing starting materials in the correct proportions to make the superconducting compound, forming a mixture. The CO.sub.2 is removed from the mixture and the ternary oxide of the compound is formed from the mixture. Next, the mixture is formed into a self-supporting green body and sintered at a sintering temperature at which the top of the self-supporting green body is molten and the bottom surface is solid. The self-supporting green body is held at the sintering temperature for a time, forming a sintered body. Next, the sintered body is cooled so that crystals form. After this step, the crystals can be further processed to increase their superconducting properties. Finally, the crystals are removed and processed for use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.