Schottky diode

US5079596A · kind A · utility

Inventors

• Robin Smith · Moreno Valley, US
• Peter Wennekers · Glückstadt, DE

Key dates

• Filing date: Apr 5, 1989
• Grant date: Jan 7, 1992
• Expiry date: Apr 5, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A schottky diode consists of a substrate from gallium/arsenide (5) on which epitaxially a monocrystalline gallium/arsenide layer (6) doped with silicium is applied. For creating the Schottky contact, a monocrystalline erbium/arsenide layer or ytterbium/arsenide layer (7) is epitaxially applied on this layer. Following as a covering layer is a highly doped gallium/arsenide layer (8).