Thin-film memory element
US5079606A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1990 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Jan 19, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A thin-film memory element made by the technique of forming thin film and functioning as a thin-film transistor. The memory element has two gate-insulating films, and two gate electrodes formed on the gate-insulating films, respectively. The first gate-insulating film can accumulate electrical charge, whereas the second gate-insulating film cannot. The gate electrode on the first gate-insulating film is used as write/erase electrode, and the gate electrode on the second gate-insulating film is used as read electrode. Since the memory element has two electrodes, one for writing or erasing data, and the other for reading data, its threshold voltage remains unchanged. Hence, data can be read from the thin-film memory element for a virtually indefinitely long period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.