Method for reducing chemical interaction between copper features and photosensitive dielectric compositions
US5081005A · kind A · utility
6Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1989 |
| Grant date | Jan 14, 1992 |
| Priority date | — |
| Expiry date | Mar 24, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The surface of metallic features are coated with a desensitizer composition comprising an amino-silane to reduce the likelihood of chemical interaction between the metallic feature and a photosensitive functional group that is included in a dielectric composition that is coated over the metallic features. The chemical interaction adversely affects the photosensitivity of the dielectric composition and, thus, inhibits the formation of complete and well defined via interconnections through the dielectric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.