Semiconductor pressure sensor
US5081437A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1990 |
| Grant date | Jan 14, 1992 |
| Priority date | — |
| Expiry date | Feb 14, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The pressure sensor is formed of semiconductor material which is formed on insulating support, i.e., as a semiconductor-on-silicon. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.