Heterojunction field effect transistor with monolayers in channel region
US5081511A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1990 |
| Grant date | Jan 14, 1992 |
| Priority date | — |
| Expiry date | Sep 6, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/605
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A heterojunction field effect transistor (HFET) having a source, drain, and channel, wherein the channel comprises a quantum well and at least one mono-atomic well or barrier layer is provided. The mono-atomic well or barrier layer has a different bandgap than the channel region and serves to modify electron wave function and conduction band energy in the channel region. Preferably, an indium arsenide well monolayer is formed in an InGaAs channel region and functions to move a first quantized energy level E.sub.0 closer to the bottom of the channel region quantum well thereby increasing electron concentration by increasing effective band offset potential. Another embodiment uses an aluminum arsenide monolayer as a barrier monolayer in the InGaAs channel. By varying location of the monolayers, confinement of electrons in the channel can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.