Semiconductor device
US5081519A · kind A · utility
47Cited by
0References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 13, 1990 |
| Grant date | Jan 14, 1992 |
| Priority date | — |
| Expiry date | Sep 13, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a single crystal III-V compound semiconductor layer disposed on a silicon on sapphire substrate comprising a silicon layer disposed on a sapphire substrate, the silicon on sapphire substrate including a silicon (001) oriented crystalline film grown on the (1102) R face of the sapphire substrate tilted 0.1 to 10 degrees toward the <110> direction or <110> direction of the silicon film away from the <0001> sapphire C axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.