Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1990 |
| Grant date | Jan 28, 1992 |
| Priority date | — |
| Expiry date | Feb 23, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/4864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of chem-mech polishing an article, preferably an electronic component substrate. The method includes the following steps; PA1 obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and PA1 contacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles wherein the abrasive particles do not include alumina, a transition metal chelated salt, a solvent for the salt, and a small but effective amount of alumina. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.