Doped crystalline compositions and a method for preparation thereof
US5084206A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1990 |
| Grant date | Jan 28, 1992 |
| Priority date | — |
| Expiry date | Feb 2, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A composition is disclosed which consists essentially of doped crystalline MTiOXO.sub.4 (wherein M is selected from the group consisting of K, Rb and Tl, X is selected from the group consisting of P and As) which contain at least about 100 ppm total of at least one dopant selected from the group consisting of Ga, Al and Si. The compositions generally have low ionic conductivity, and may be prepared using an improved flux process wherein Ga, Al and/or Si dopant is added to the flux in a total amount of at least about 0.5 mole % and the crystallization temperature is controlled to provide a crystalline composition containing the desired amount of dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.