Electronic device substrate using silicon semiconductor substrate
US5084438A · kind A · utility
92Cited by
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10Claims
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Key dates
| Filing date | Mar 21, 1989 |
| Grant date | Jan 28, 1992 |
| Priority date | — |
| Expiry date | Mar 21, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/704
Abstract
An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.