Field effect transistor with active layer apart from guard-ring
US5084744A · kind A · utility
5Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1988 |
| Grant date | Jan 28, 1992 |
| Priority date | — |
| Expiry date | Mar 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/83
Abstract
In a field effect transistor (JFET) having a compound semiconducting substrate, a buffer layer having a guard-ring, an active layer, source regions, drain regions, and gate regions, the guard-ring is separated from the active layer whereby gate junction capacitance and gate leakage current are lowered without raising a gate resistance value. As a result, noise characteristics and high frequency characteristics can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.