Patent · US Expired

Photovoltaic device

US5085711A · kind A · utility

13Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 15, 1990
Grant dateFeb 4, 1992
Priority date
Expiry dateFeb 15, 2010

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.