Method for fine patterning
US5086013A · kind A · utility
6Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1989 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Aug 2, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lift-off method for fine patterning includes the steps of: applying a photoresist layer to a substrate; implanting ions into predetermined regions in a surface layer of the photoresist layer; irradiating the photoresist layer with ultraviolet from above; developing the photoresist layer to form a resist pattern for lift-off; depositing a desired material with a predetermined thickness from above the resist pattern; and removing the resist pattern, thereby lifting off the material on the resist pattern, whereby a fine pattern of the desired material is left on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.