Fast turn-off of thyristor structure
US5086242A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1990 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Oct 16, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/131
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A fast turn-off thyristor including a first active shunt region in the cathode gate region connected electrically to the anode terminal for shunting carriers around the anode gate region in response to the thyristor being on and a second shunt region in the anode gate region connected electrically to the cathode terminal for shunting carriers around the cathode gate region in response to the thyristor being on. These active shunts are inactive until the thyristor is turned on and are structured to remain active until after the thyristor is turned off. The active shunts are transistors in parallel with the pair of interconnected transistors which are for a PNPN thyristor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.