Photo-anodic oxide surface passivation for semiconductors
US5086328A · kind A · utility
4Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1990 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Feb 2, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/912
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for passivating infrared detector arrays 50. A wafer 48 of indium antimonide (InSb) is subjected an anodization process while being illuminated by a bright incandescent lamp 66. In one embodiment, the photo-anodized layer 72 is used in an array 50 to passivate implanted diode regions 76,78 on the front side thereof, while employing an antireflective coating 74 on the backside anodized surface 70.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.