Resonantly pumped, erbium-doped, 2.8 micron solid state laser with high slope efficiency
US5086432A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1991 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | May 23, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/0941
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser system and method for producing a laser emission at a wavelength of ubstantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser system comprises a crystal having a host material doped with erbium; a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path therebetween; and resonant pumping means for directly pumping the .sup.4 I.sub.11/2 upper laser state of the erbium with a pump beam at a preselected wavelength to cause the erbium-doped crystal to produce a laser emission corresponding to the .sup.4 I.sub.11/2 .fwdarw..sup.4 I.sub.13/2 laser transition having a wavelength of substantially 2.8 microns, a portion of the laser emission at substantially 2.8 microns being outputted from one of the first and second reflective elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.