Interferometric pressure sensor capable of high temperature operation and method of fabrication
US5087124A · kind A · utility
Inventors
Key dates
| Filing date | May 9, 1989 |
| Grant date | Feb 11, 1992 |
| Priority date | — |
| Expiry date | May 9, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0077
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An interferometric-based pressure transducer is fabricated from two layers of silicon having different crystal orientations which have been processed using selective anisotropic etching to produce in one silicon layer a mirror surface and a groove that is aligned with the mirror, and a pressure-responsive membrane in the other layer. The layers are joined with the membrane opposite the mirror, and an optical fiber is secured in the groove so that light from the optical fiber is conveyed by the mirror surface between the membrane and the optical fiber. Conventional interferometric apparatus compares transmitted and received light in order to sense deformation of the membrane and thereby sense pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.