Aluminum target for magnetron sputtering and method of making same
US5087297A · kind A · utility
36Cited by
25References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 1991 |
| Grant date | Feb 11, 1992 |
| Priority date | — |
| Expiry date | Jan 17, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/5116
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum target which comprises a body of aluminum or aluminum alloy having a grain size of less than 2 mm and a near ideal <110> fiber texture; and a method of making an aluminum target for magnetron sputtering which comprises: providing a body of fine grain aluminum or aluminum alloy having a grain size of less than 2 mm; heating the body to an elevated forging temperature in the range of 550.degree. F. to 900.degree. F.; and slow forging the body at the rate of 0.5 to 4 inches per minute to produce a preferred grain orientation in the <110> direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.