Method and apparatus for manufacturing silicon single crystals
US5087429A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1989 |
| Grant date | Feb 11, 1992 |
| Priority date | — |
| Expiry date | Apr 26, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.