Patent · US Expired

Method of manufacturing photo-mask and photo-mask manufactured thereby

US5087535A · kind A · utility

18Cited by
3References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 1987
Grant dateFeb 11, 1992
Priority date
Expiry dateFeb 27, 2007

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/146
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photo-mask and a method of manufacturing a photo-mask, which includes the steps of applying a resist film onto a substrate of quartz, glass and the like, subjecting the resist film to light exposure and development to form a fine resist pattern, etching the mask substrate covered by the fine resist pattern causing a non-light transmitting thin film of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing the thin film on the resist pattern together with the resist film, thereby to form the photo-mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.