Misalignment tolerant antifuse
US5087958A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1990 |
| Grant date | Feb 11, 1992 |
| Priority date | — |
| Expiry date | Nov 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A misalignment tolerant antifuse includes a lower electrode, bounded by a relatively thick first insulating layer, an upper electrode separated from the lower electrode by a second insulating layer having a thickness less than that of the first insulating layer, a pair of antifuse window regions in the second insulating layer, abutting the first insulating layer on opposite sides of the lower electrode, the insulating material in the window regions being thinner than the remainder of the second insulating layer, and an upper electrode disposed above the second insulating layer and lying over the pair of regions and at least a portion of the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.