Method for producing high silicon steel strip in a continuously treating line
US5089061A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1988 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Sep 22, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F1/14783
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for producing high silicon steel strip in a continuous treatment line through chemical vapor deposition (called "CVD" hereinafter), wherein the steel strip is subjected continuously to siliconization at temperatures between 1023.degree. and 1200.degree. C. by CVD in a non-oxidizing gas atmosphere containing SiCl.sub.4 between 5% and 35% in molar fraction. Subsequently a diffusion treatment is performed in a non-oxidizing gas atmosphere not containing SICl.sub.4 for diffusing Si uniformly throughout the steel strip, which is then cooled and coiled. If required, the steel strip may be coated with an insolating film and subjected to a baking treatment, before cooling and coiling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.