Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation
US5089426A · kind A · utility
22Cited by
13References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1990 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Jan 16, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
Abstract
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.