Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced CVD
US5089442A · kind A · utility
314Cited by
13References
11Claims
0Family size
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Key dates
| Filing date | Sep 20, 1990 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Sep 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide on a substrate, voids and discontinuities are reduced by first depositing silicon dioxide in a sputter each chamber (22) in which a magnetic field is produced within the rf plasma for depositing the silicon dioxide. Simultaneous sputter etch and deposition occurs which inhibits net deposition at the corners of metal conductors over which the silicon dioxide is deposited. The substrate is then removed and transferred through a load lock (27) to a conventional PECVD deposition chamber (23).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.