Quantum well device with control of spontaneous photon emission, and method of manufacturing same
US5089860A · kind A · utility
Inventors
Key dates
| Filing date | Jun 25, 1990 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Jun 25, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing being less than the optical emission wavelength of the quantum well. An enhancement/inhibition ratio on the order of 10 is possible according to the present invention using a single reflector, and enhancement/inhibition ratios on the order of 1000 are possible when two reflectors are used in the quantum well light-emitting diode structures. In addition, according to the present invention, the gain, directionality, and efficiency of a vertical cavity surface-emitting laser can also be greatly improved. A method of making a device according to the present invention is also presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.