Pressurized interconnection system for semiconductor chips
US5089880A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1989 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Jun 7, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer pressure stack (microstack) has a plurality of layers formed of a material that may have a high time-dependent deformation factor and a plurality of segments formed in each layer. Each segment comprises a conductive material having a low time-dependent deformation factor and pressure is provided along a column of aligned segments to establish electrical interconnections between the segments in various layers. Interposers formed of non-conductive material may be provided in selected segments to form points of electrical isolation. The plurality of layers, or wafers, includes signal wafers and ground/voltage wafers. The signal wafers are formed of a low dielectric constant material to optimize the propagation velocity of signals traveling in signal traces connecting selected segments in the signal wafer. More than 100 wafers may be provided in a microstack and repairs and revisions of conductor routing are easily accomplished by substituting new wafers within the microstack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.