Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
US5090609A · kind A · utility
56Cited by
3References
24Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 26, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Apr 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An invention relating to a technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, and more particularly pertaining to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.