Method of forming a thin copper film by low temperture CVD
US5091209A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Oct 11, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.