Plasma CVD of aluminum films
US5091210A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Sep 19, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposited film formation method which forms an aluminum film by use of the plasma CVD method, PA0 wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A). A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising: PA0 (a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and PA0 (b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.