Method of fabricating a dielectric isolated area
US5091330A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Dec 28, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric isolated area is formed by bonding a first and a second wafer. A first wafer having a first and a second major surface is provided. A second wafer having a first and a second major surface is then provided. Trenches are formed in the first surface of the second wafer. Subsequently, a dielectric layer which can be planarized is formed on the surface of the second wafer having trenches formed therein. The first and second wafers are then bonded so that the dielectric layer and the first surface of the first wafer are bonded to each other. A portion of the second surface of the second wafer is then removed down to at least the bottom of each trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.