Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US5091333A · kind A · utility
90Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Sep 7, 1988 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Sep 7, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.