Superlattice structure
US5091756A · kind A · utility
23Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Mar 19, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/761
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A superlattice structure composed of at least two kinds of crystal layers, such as semiconductor layers, being different in bandgap, being combined alternately with each others, and the physical parameters of the layers being designed so that phase differences of reflected waves of injected electrons or holes are substantially equal to .pi. multiplied by an odd numbered integer so that the energy potential barrier height is effectively increased. When used in semiconductor lasers, it allows the confining efficiency of injected carriers to be noticeably improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.