Semiconductor device
US5091760A · kind A · utility
28Cited by
16References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Apr 10, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a bipolar transistor and a MOS transistor. The bipolar transistor is formed on the semiconductor substrate and has electrodes. A base electrode of the bipolar transistor and the electrodes of the MOS transistor contain the same kind of impurity so as to form a single layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.