Memory device
US5091880A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1990 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Jan 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/947
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A memory device comprises a base plate with a memory element supporting layer, a probe with a pointed tip portion, and a fine scan element for causing the probe to scan over the surface of the memory element supporting layer. When the probe is approached to the surface of the memory element supporting layer and a suitable bias voltage is applied across the probe and the memory element supporting layer, a tunnel current is cause to flow therebetween and a specific region of the surface of the supporting layer is excited. The excited region can adsorb one molecule of, for example, di-(2-ethylhexyl)phthalate. By causing the memory element to be adsorbed selectively on the memory element supporting layer, data is recorded in the form of a projection-and-recess pattern. The recorded data can be read out by observing the surface configuration of the supporting layer in accordance with the principle of an STM (scanning tunneling microscope).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.