Highly pure sintered carbide with high electric conductivity and process of producing the same
US5093039A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 6, 1989 |
| Grant date | Mar 3, 1992 |
| Priority date | — |
| Expiry date | Nov 6, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/04
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an electrically conductive sintered silicon carbide body having an electric resistivity of not higher than 1 .OMEGA..multidot.cm, which is produced by PA1 (a) mixing PA2 (1) a first silicon carbide powder having a mean grain size of from 0.1 to 10 .mu.m with PA2 (2) a second silicon carbide powder having a mean grain size of not greater than 0.1 .mu.m prepared by PA3 (2-1) introducing a starting gas composed of a silane compound of silicon halide and a hydrocarbon into a plasma of a non-oxidative atmosphere, and PA3 (2-2) conducting gas phase reaction between the silane compound or silicon halide and the hydrocarbon while controlling the pressure of the reaction system within the range of from less than 1 atom to 0.1 torr, and PA2 (3) optionally, a carbon powder which is required for reducing oxides contained in both the first and second silicon carbide powders, PA1 (b) optionally reducing the oxides with the carbon, and PA1 (c) heating the resulting mixture for sintering. Also, processes of producing the same are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.