Thin film transistor with 10-15% hydrogen content
US5093703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1989 |
| Grant date | Mar 3, 1992 |
| Priority date | — |
| Expiry date | Mar 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a glass substrate on a surface of which a hydrogenated amorphous silicon (a-Si:H) film is formed. On the a-Si:H film, a source electrode and a drain electrode are respectively formed with a suitable interval between them. A gate electrode is formed positioned between the source electrode and the drain electrode. Insulation film is interposed between the gate electrode and the a-Si:H film. In a direct photo-CVD method using a low pressure mercury lamp, bandtail characteristics energy of the a-Si:H film is made less than 40 meV by controlling a decomposition region of a reaction gas, that is, the distance between the glass substrate and a gas supply port, whereby a thin film transistor having a good response is obtainable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.