Method of manufacturing ITO sputtering target
US5094787A · kind A · utility
18Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1990 |
| Grant date | Mar 10, 1992 |
| Priority date | — |
| Expiry date | Nov 21, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In manufacturing a high-density ITO sputtering target by press-molding a powder mixture consisting essentially of indium oxide and tin oxide is compacted and the resulting compact is sintered. The sintering is performed in an atmosphere of oxygen under a pressure of at least one atmosphere (gauge pressure). The present invention offers very advantageous effects from the industrial viewpoint in that it permits mass production of high-performance, high-density ITO targets at low cost using mass productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.