Method of patterning a transparent conductor
US5094978A · kind A · utility
31Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1990 |
| Grant date | Mar 10, 1992 |
| Priority date | — |
| Expiry date | Jul 19, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
Abstract
A method of forming a pattern of a transparent conducting film such as an indium tin oxide film, formed on the surface of a substrate including Si and being heated. A two-step etching method is employed, in which the transparent conducting film is wet-etched by an aqueous solution of a halogenide and thereafter an interfacial reacted layer generated at the interface of the transparent conducting film and substrate including Si is etched by a plasma etching method using a halogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.