Sintered silicon carbide body with high thermal conductivity and process of producing the same
US5094985A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 6, 1989 |
| Grant date | Mar 10, 1992 |
| Priority date | — |
| Expiry date | Nov 6, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9607
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a sintered silicon carbide body with a high thermal conductivity which has a thermal conductivity of not less than 150 W/m.multidot.K, which is produced by PA0 (a) mixing PA1 (1) a first silicon carbide powder having a mean grain size of from 0.1 to 10 .mu.m with PA1 (2) a second silicon carbide powder having a mean grain size of not greater than 0.1 .mu.m prepared by PA2 (2-1) introducing a starting gas composed of a silane compound or silicon halide and a hydrocarbon into a plasma of a non-oxidative atmosphere, and PA2 (2-2) conducting gas phase reaction between the silane compound or silicon halide and the hydrocarbon while controlling the pressure of the reaction system within the range of from less than 1 atom to 0.1 torr, and PA1 (3) optionally, a carbon powder which is required for reducing oxides contained in both the first and second silicon carbide powders, PA0 (b) optioanlly reducing the oxides with the carbon, and PA0 (c) heating the resulting mixture for sintering. Also, processes of producing the same are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.