Bipolar cross-coupled memory cells having improved immunity to soft errors
US5095355A · kind A · utility
10Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1990 |
| Grant date | Mar 10, 1992 |
| Priority date | — |
| Expiry date | Jul 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/10
Abstract
A bipolar RAM comprising a plurality of memory cells formed of cross-coupled bipolar transistors and a peripheral bipolar circuit formed of bipolar transistor, provided with an epitaxial layer which is to be the collector region of the bipolar transistor in the memory cell portion which is thinner and has higher impurity density than the epitaxial layer which is to be the collector region of a bipolar transistor in the peripheral circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.