Process for manufacturing segmented channel structures
US5096535A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1990 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Dec 21, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
In semiconductor technologies such as thermal ink jet printhead fabrication, there exists a need for the precise placement of channels in a substrate. Due to errors in plane alignment in semiconductor substrates, channel structures tend to widen dimensions, thus lowering precision. A one-step anisotropic etching process is disclosed for accurately making channel structures, as well as reservoir structures. Channel structures are formed by segmenting the channel, such that during the anisotropic etching, thin walls between the segments break down before the completion of the etch. Widening of channels is greatly reduced, thus increasing precision. During such a one-step process, larger structures, such as a reservoir, can be formed during the same step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.