Substrate used for fabrication of thick film circuit
US5096768A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1990 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Feb 5, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating substrate is used for fabrication of a thick film circuit and comprises a foundation of aluminum nitride and a surface film structure provided on the foundation, in which the foundation contains at least one oxidizing agent selected from the group consisting of an yttrium oxide and a calcium oxide ranging from 0.1% to 10% by weight for enhancing a stiffness of the foundation, and in which the surface film structure is of the multi-level surface film structure having a lower surface film of an aluminum oxide rapidly grown on the foundation in the presence of the oxidizing agent and an upper surface film containing a silicon oxide and a substance selected from the group consisting of a zirconium oxide, a titanium oxide and a boron oxide for enhancing the resistivity against a firing operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.