Processes for the chemical vapor deposition of copper and etching of copper
US5098516A · kind A · utility
85Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1990 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Dec 31, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided for selectively depositing copper films on metallic or other electrically conducting portions of substrate surfaces by contacting the substrate at a temperature from 110.degree. to 190.degree. C. with a volatile organometallic copper complex, in the gas phase, represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H or C.sub.1 -C.sub.8 perfluoroalkyl and L is carbon monoxide, an isonitrile, or an unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.