Method of manufacturing a semiconductor device by mega-electron volt ion implantation
US5098852A · kind A · utility
43Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1990 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Jul 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming desired semiconductor elements in a major surface region of a semiconductor substrate, and ion-implanting a selected element into the semiconductor substrate from the major surface of the substrate to form an ion-implanted layer by the implanted element. A heat treatment is performed to the ion-implanted substrate, causing the ion-implanted layer to getter contaminant heavy metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.