Method of making ohmic electrical contact to a matrix of semiconductor material
US5098862A · kind A · utility
2Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1990 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Nov 7, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/929
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes. The holes are filled with insulating polycrystalline silicon. The region of the selected area is heavily doped, and an ohmic contact member is made thereto. The underlying rods are spaced from the ohmic contact member and the heavily-doped region by intervening polycrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.