Patent · US Expired

High step coverage silicon oxide thin films

US5098865A · kind A · utility

525Cited by

1References

5Claims

0Family size

Inventors

Jose Rui Souto Machado · Allentown, US
Terry Arthur Francis · Schenectady, US
Hans P. W. Hey · Phoenix, US

Key dates

Filing date	Jul 30, 1991
Grant date	Mar 24, 1992
Priority date	—
Expiry date	Jul 30, 2011

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/118
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for preparing high step coverage silicon dioxide coatings on semiconductor wafers comprising the placing of the wafer to be coated in a process chamber, introducing disilane and nitrous oxide into the process chamber and maintaining the wafer in an atmosphere consisting essentially of a gaseous mixture of disilane and nitrous oxide and initiating and maintaining plasma enhanced chemical vacuum deposition of silicon dioxide from said gaseous mixture by applying radio frequency energy to the wafer to create a plasma adjacent the surface of said wafer is disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.