Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
US5099294A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1991 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Jan 16, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/871
Abstract
An edge defined geometry is used to produce very small area tunnel junctions (30) in a structure with niobium nitride superconducting electrodes (14, 28) and a magnesium oxide tunnel barrier (24). The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.