Thin film transistor
US5099296A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1990 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Apr 6, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
A thin film transistor in which a source electrode is electrically isolated from a drain electrode and a gate electrode. The gate electrode is formed on one surface of an electrically insulating layer. A semiconducting layer is formed on the other surface of the electrically insulating layer. The semiconducting layer has a charge carrier mobility of at least 1 cm.sup.2 /V-sec. and is made from a polycrystalline diamond layer. The source electrode and the drain electrode are formed on one surface of the polycrystalline diamond layer. The other surface of the polycrystalline diamond layer is in integral contact with the other surface of the electrically insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.